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Active Screen Plasma nitrogen atmosphere, and influencing factors nitriding


. When dealing with voltages greater than 800V, these particles are iron nitride (, ? a small amount) and a small amount of oxides, and as the voltage increases, the increase, ?, and FeO decrease in the amount of 300020001000O 600 050 004 000 when the voltage up to 1000V, there is almost no oxide particles. 3 Analysis and discussion of treatment in nitrogen atmosphere,[link widoczny dla zalogowanych], ASPN, the nitrogen atom is produced by the dissociation of nitrogen molecules from the: N Plant N, Nz + --* N + + N, the second step produced a reactive nitrogen atom. The ionization potential is 24.5eV, South particle inelastic collision energy exchange theorems known,[link widoczny dla zalogowanych], and only high energy 30405O6O708020 / (.) Pg ·, XRDpatterns0tth. particlesdepositedoncopperplate at 49eV collision of N2 + molecular nitrogen dissociation of nitrogen molecules can enable the production of reactive nitrogen atoms 4 Conclusion N 『81 shows that the literature. Discharge. Electricity. When down in the 600v, N + in a process where the average obtained () voltage is low, the oxygen on the active screen plasma nitriding of the electric field energy is less than 49ev, space plasma reactive nitrogen is very small. Did not have a major impact,[link widoczny dla zalogowanych], iron combines with oxygen to produce mainly a large amount of nitrogen oxide ion nitriding, so little effect nitriding. Discharge voltage high-speed rail can not be active screen plasma nitriding treatment. When at 800V, N + in a process where the average obtained from the south of electric (2) discharge voltage higher than 800V, the iron and nitrogen binding energy field for 75.22ev, more than 49ev, crack force by strong collision mainly generated when the activity of iron nitride Screen Plasma Nitriding Solutions produce large amounts of reactive nitrogen atoms. These high-energy nitrogen atoms in the live treatment, and to get a good nitriding effect. Of the screen near the iron atoms into FeIN, active screen is nitrogen. References: splash screen from the activity of Fe down during transport to the T piece [1】 Ministry of Machine Tool Institute. Ion nitriding guidance information [M】. Beijing: Machine in the adsorption of a large number of nitrogen atoms, when the particles deposited on the sample surface mechanical Industry Press. 1976.122. After the adsorption of nitrogen at a certain temperature conditions, starting desorption into [2] XuBingzhong, ZhangYingzhi. Collisiondissociationm0de1 as the active nitrogen atoms, desorption of the reactive nitrogen atom to: pieces of the internal inionnitriding [J】. SurfaceEngineering, 1987,3 (3): infiltration of the formation of the nitrided layer. 226-232 ? Since the plasma nitriding is carried out under low vacuum. Vacuum 【】 Yunteng, Week, Qi,[link widoczny dla zalogowanych], Zhong Li, and other nitrogen plasma nitriding furnace mechanism of Arts and inevitably a small amount of residual air,[link widoczny dla zalogowanych], furnace wall also absorbed less Georg metal esJ. Hot T deal Cpl'Proceedin amount of water vapor or air carp fThe12h. In the ion nitriding process, 600VIntemationalFederalionofHeatTreatmentandsuce less reactive nitrogen when, O is activated, Fe and O atoms combine priority-shaped EngineeringCongress [c]. Australia :2000.229-235. Into iron oxide, the residual oxygen furnace play a leading role. With the power [5] LiCX, BellT, DongH. Astudyofactivescreenplasma pressure and a significant increase in the plasma space N, when the Fe atom nitriding [J] · SurfaceEngineering, 2002,18 (3): 219227 · mainly with N combine to form iron nitride. Weakening of these residues [] Zhao Huili, Liu Ling, Zhu Yanjun, the activity of high-speed steel screen plasma surface expanse 【[] * I oxygen. Voltage higher than 800V day after nitriding inch '[7】 Joy of work. Metal heat treatment, a clear nitride formation, and as the voltage increases, the ion 20O4, 29 (3) :1-3. The higher the energy, nitrogen will be more and more, then the more oxides [8] Zhao Huili. Active Screen Plasma Nitriding of the mechanism and application of basic research [D】. To the less young. To 1200V when there is almost no oxide islands. Qingdao University of Technology. 2005. Tin \
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